Title :
Adaptive sensing and design for reliability
Author :
Singh, P. ; Sylvester, D. ; Blaauw, D.
Author_Institution :
Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
Chip lifetime degradation due to oxide breakdown is a major concern for today´s designers. We review existing methods to solve the gate oxide reliability issues and also introduce an in situ degradation monitoring technique. This technique allows early detection of oxide degradation and makes a system aware of its reliability. When used in conjunction with reliability management schemes, it minimizes existing pessimistic reliability margins and allows an improvement in device performance.
Keywords :
electric breakdown; integrated circuit design; integrated circuit reliability; adaptive sensing; chip lifetime degradation; gate oxide reliability design; in situ degradation monitoring technique; oxide breakdown; reliability management schemes; Circuits; Degradation; Electric breakdown; Electronics industry; Monitoring; Semiconductor device measurement; Sensor systems; Stress; Temperature sensors; Voltage; oxide degradation; reliability; sensors;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488750
