DocumentCode
2698316
Title
An extensive and improved circuit simulation methodology for NBTI recovery
Author
Kufluoglu, Haldun ; Reddy, V. ; Marshall, A. ; Krick, J. ; Ragheb, T. ; Cirba, C. ; Krishnan, A. ; Chancellor, C.
Author_Institution
TDI, Texas Instrum., Dallas, TX, USA
fYear
2010
fDate
2-6 May 2010
Firstpage
670
Lastpage
675
Abstract
A feasible computational framework that enables improved predictability of NBTI degradation within commercially available tools is discussed. The NBTI model is used for both delay correction in transistor characterization data and real-time circuit operation where recovery is present. The complementary nature of implementation is readily incorporated into existing model extraction and verification tools. The method provides significantly enhanced accuracy in simulations when compared to circuit data, yet retains practicality and flexibility.
Keywords
MOSFET; circuit simulation; delays; semiconductor device reliability; NBTI degradation recovery; PMOS transistor; delay correction; improved circuit simulation methodology; model extraction tools; model verification tools; transistor characterization data; Aging; Circuit simulation; Data mining; Degradation; Delay; Niobium compounds; Pollution measurement; Semiconductor device modeling; Stress measurement; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4244-5430-3
Type
conf
DOI
10.1109/IRPS.2010.5488753
Filename
5488753
Link To Document