• DocumentCode
    2698316
  • Title

    An extensive and improved circuit simulation methodology for NBTI recovery

  • Author

    Kufluoglu, Haldun ; Reddy, V. ; Marshall, A. ; Krick, J. ; Ragheb, T. ; Cirba, C. ; Krishnan, A. ; Chancellor, C.

  • Author_Institution
    TDI, Texas Instrum., Dallas, TX, USA
  • fYear
    2010
  • fDate
    2-6 May 2010
  • Firstpage
    670
  • Lastpage
    675
  • Abstract
    A feasible computational framework that enables improved predictability of NBTI degradation within commercially available tools is discussed. The NBTI model is used for both delay correction in transistor characterization data and real-time circuit operation where recovery is present. The complementary nature of implementation is readily incorporated into existing model extraction and verification tools. The method provides significantly enhanced accuracy in simulations when compared to circuit data, yet retains practicality and flexibility.
  • Keywords
    MOSFET; circuit simulation; delays; semiconductor device reliability; NBTI degradation recovery; PMOS transistor; delay correction; improved circuit simulation methodology; model extraction tools; model verification tools; transistor characterization data; Aging; Circuit simulation; Data mining; Degradation; Delay; Niobium compounds; Pollution measurement; Semiconductor device modeling; Stress measurement; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2010 IEEE International
  • Conference_Location
    Anaheim, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4244-5430-3
  • Type

    conf

  • DOI
    10.1109/IRPS.2010.5488753
  • Filename
    5488753