• DocumentCode
    2698349
  • Title

    Non-destructive monitoring of planarization processes [CMOS technology]

  • Author

    Teissier, J.F. ; Tissier, A. ; Eymery, J.M. ; Common, J.C. ; Mayet, C.

  • Author_Institution
    SEI, La Tour du Pin, France
  • fYear
    1990
  • fDate
    12-13 Jun 1990
  • Firstpage
    64
  • Lastpage
    70
  • Abstract
    A novel technique for control and optimization of planarization processes is presented. The method is called the DOPED contactless method and is based on analysis of the diffraction of light by a periodic grating for the control of the reproducibility of certain planarization processes: (i) oxide sidewall spacers, (ii) oxide deposition and etchback, and (iii) etchback of a sacrificial polymeric layer. This simple nondestructive method allows the reproducibility of the processes to be monitored and the achieved profiles after planarization to be quantified geometrically after calibration. It is shown how, for each planarizing scheme investigated, the DOPED measurement is related to the relevant geometrical parameters which describe the degree of planarization
  • Keywords
    CMOS integrated circuits; integrated circuit technology; monitoring; oxidation; process control; sputter etching; CMOS technology; DOPED contactless method; control; etchback; geometrical parameters; light diffraction; nondestructive monitoring; optimization; oxide deposition; oxide sidewall spacers; periodic grating; planarization processes; profiles; sacrificial polymeric layer; CMOS process; CMOS technology; Chemical technology; Dielectrics; Diffraction; Etching; Monitoring; Planarization; Reproducibility of results; Resists;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
  • Conference_Location
    Santa Clara, CA
  • Type

    conf

  • DOI
    10.1109/VMIC.1990.127845
  • Filename
    127845