Title :
Evaluation of laser planarized second aluminum for semiconductor devices
Author :
Boeck, B.A. ; Fu, K.Y. ; Pintchovski, F. ; Crain, N. ; Chen, S. ; Chu, H.
Author_Institution :
Motorola Inc., Austin, TX, USA
Abstract :
Laser planarization was applied to the second layer of metallization of a static memory part. Electrical evaluation by means of chain resistance, contact chain resistance, metal continuity/shorts, and leakage showed no deleterious effect for the laser planarized parts when compared to the control split, while SEM cross-sections showed fully planarized vias and large grain size for the metal. An electromigration study conducted to evaluate the effect of laser planarization on reliability indicated that an improvement in electromigration resistance, as compared to the control split, is attained when the metal is submitted to laser planarization
Keywords :
aluminium; contact resistance; electromigration; laser beam applications; metallisation; scanning electron microscope examination of materials; Al; SEM cross-sections; SRAM wafers; chain resistance; contact chain resistance; electromigration resistance; excimer laser; fully planarized vias; grain size; laser planarization; leakage; metal continuity/shorts; metallization; reliability; second layer; semiconductor devices; static memory part; Aluminum; Contact resistance; Electric resistance; Electromigration; Grain size; Metallization; Optical control; Planarization; Semiconductor lasers; Size control;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1990.127849
