DocumentCode :
2698448
Title :
Lifetime engineering in high-power devices
Author :
Vobecký, J.
Author_Institution :
Czech Technical University in Prague
fYear :
2000
fDate :
2000
Firstpage :
21
Lastpage :
28
Keywords :
Anodes; Buffer layers; Insulated gate bipolar transistors; MOSFET circuits; Microelectronics; P-i-n diodes; Power MOSFET; Semiconductor diodes; Spontaneous emission; Thyristors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Print_ISBN :
0-7803-5939-9
Type :
conf
DOI :
10.1109/ASDAM.2000.889445
Filename :
889445
Link To Document :
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