DocumentCode :
2698480
Title :
Metal-voiding phenomenon in aluminum and its alloys
Author :
Murali, V. ; Sachdev, S. ; Banerjee, I. ; Casey, S. ; Gargini, P. ; Welles, C. ; Smith, L.
Author_Institution :
Intel Corp., Santa Clara, CA, USA
fYear :
1990
fDate :
12-13 Jun 1990
Firstpage :
127
Lastpage :
132
Abstract :
It is shown that metal void generation is not a single-dimensional problem. The extent of voiding was found to be related to metal deposition conditions, the presence and extent of solutes (Si, Cu), the etch process, the postetch cleaning process, the passivation material and postpassivation temperature cycling. A simple, rapid (5-min), nondestructive technique, thermal wave imaging (TW1) is presented. It allows for the accurate determination of the extent of cracking in metal lines that are underneath passivation films. This technique is compared with backscatter electron (BSE) imaging, which is also capable of looking at cracks through passivation films. Thermal wave data on the impact of accelerated aging of devices (at 400°C) on metal voiding are presented
Keywords :
aluminium; aluminium alloys; crack detection; infrared imaging; life testing; metallisation; nondestructive testing; passivation; surface treatment; voids (solid); 400 degC; Al; AlCu; AlSi; accelerated aging; backscatter electron imaging; cracking; etch process; metal deposition conditions; metal void generation; nondestructive technique; passivation material; postetch cleaning process; postpassivation temperature cycling; thermal wave imaging; Aluminum alloys; Backscatter; Cleaning; Electrons; Etching; Inorganic materials; Passivation; Photothermal effects; Rapid thermal processing; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
Conference_Location :
Santa Clara, CA
Type :
conf
DOI :
10.1109/VMIC.1990.127855
Filename :
127855
Link To Document :
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