Title :
Finite element numerical modeling of currents in VLSI interconnects
Author :
Enver, Ahsan ; Clement, J. Joseph
Author_Institution :
Digital Equipment Corp., Hudson, MA, USA
Abstract :
Three-dimensional finite-element modeling has been used to simulate density distributions in filled-via structures. Peak current density in a single filled via was studied as a function of the direction of the current path, resistivity of the via-filled material, metal overlap of the via, and misalignment. Simulations were also carried out to examine the effects of the direction of the current flow and the resistivity of the via-fill material on the distribution of current in multiple vias
Keywords :
VLSI; current density; current distribution; electromigration; finite element analysis; integrated circuit technology; metallisation; 3D finite element modelling; VLSI interconnects; current density distributions; current flow; electromigration; filled-via structures; metal overlap; misalignment; multiple vias; peak current density; resistivity; via-filled material; Atomic measurements; Current density; Electromigration; Finite element methods; Inorganic materials; Integrated circuit interconnections; Numerical models; Proximity effect; Temperature; Very large scale integration;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1990.127858
