DocumentCode :
2698556
Title :
Finite element numerical modeling of currents in VLSI interconnects
Author :
Enver, Ahsan ; Clement, J. Joseph
Author_Institution :
Digital Equipment Corp., Hudson, MA, USA
fYear :
1990
fDate :
12-13 Jun 1990
Firstpage :
149
Lastpage :
156
Abstract :
Three-dimensional finite-element modeling has been used to simulate density distributions in filled-via structures. Peak current density in a single filled via was studied as a function of the direction of the current path, resistivity of the via-filled material, metal overlap of the via, and misalignment. Simulations were also carried out to examine the effects of the direction of the current flow and the resistivity of the via-fill material on the distribution of current in multiple vias
Keywords :
VLSI; current density; current distribution; electromigration; finite element analysis; integrated circuit technology; metallisation; 3D finite element modelling; VLSI interconnects; current density distributions; current flow; electromigration; filled-via structures; metal overlap; misalignment; multiple vias; peak current density; resistivity; via-filled material; Atomic measurements; Current density; Electromigration; Finite element methods; Inorganic materials; Integrated circuit interconnections; Numerical models; Proximity effect; Temperature; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
Conference_Location :
Santa Clara, CA
Type :
conf
DOI :
10.1109/VMIC.1990.127858
Filename :
127858
Link To Document :
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