Title :
Step coverage study of PETEOS deposition for intermetal dielectric applications
Author :
Yu, D. ; Favreau, D. ; Martin, E. ; Manocha, A.
Author_Institution :
AT&T Bell Lab., Allentown, PA, USA
Abstract :
A simple one-step plasma-enhanced chemical vapor deposition of TEOS (PETEOS) deposition process for submicron multilevel metallization has been developed. The effect of deposition conditions on PETEOS step coverage and deposition profile is investigated. Two new processes are demonstrated which meet the step coverage requirements for 0.6-μm technology. The first process produces a directional deposition profile using relatively low pressure and high TEOS to oxygen flow. The second process utilizes the addition of NF3 to achieve a favorable dielectric profile
Keywords :
dielectric thin films; metallisation; plasma CVD; semiconductor technology; silicon compounds; 0.6 micron; NF3; PETEOS deposition; SiO2; TEOS; deposition profile; dielectric profile; directional deposition profile; intermetal dielectric; one-step plasma-enhanced chemical vapor deposition; step coverage; submicron multilevel metallization; Aluminum; Costs; Dielectric materials; Etching; Metallization; Plasma applications; Plasma materials processing; Silicon compounds; Testing; Throughput;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1990.127861
