Title :
Low temperature interlayer formation technology using a new siloxane polymer film
Author :
Suzuki, M. ; Homma, T. ; Numasawa, Y.
Author_Institution :
NEC Corp., Kanagawa, Japan
Abstract :
A new technology for low-temperature dielectric film formation under Al wirings is described. This technology utilizes spin-on film formed from the organic siloxane polymer solution optimized to have minimal film shrinkage/stress generation during heat treatment. The optimized solution is composed of 62-mol.% tetra-ethoxy-silane [Si(OEt) 4], 31-mol.% methyl-tri-ethoxy-silane [Me-Si(OEt)3], and 7-mol.% phosphorus-triethoxide [PO(OEt) 3] oligomer in ethyl alcohol. Crack-free thick siloxane polymer film with no carbon is formed by three-step heat treatment processes (150°C hot plate baking, 400°C furnace annealing in N 2, and 800°C furnace annealing in O2). The planarization capability of this film is superior to that of the conventional BPSG reflow film, and other film properties are as good as those of the CVD-PSG film
Keywords :
dielectric thin films; heat treatment; integrated circuit technology; metallisation; polymer films; semiconductor technology; Al wirings; film properties; furnace annealing; heat treatment; hot plate baking; interlayer formation technology; low-temperature dielectric film formation; methyl-tri-ethoxy-silane; minimal film shrinkage/stress generation; organic siloxane polymer solution; phosphorus-triethoxide; planarization capability; siloxane polymer film; spin-on film; tetra-ethoxy-silane; three-step heat treatment; Artificial intelligence; Dielectric films; Heat treatment; Organic compounds; Polymer films; Semiconductor films; Silicon; Stress; Temperature; Wiring;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1990.127862
