Low temperature interlayer formation technology using a new siloxane polymer film

Author

Suzuki, M. ; Homma, T. ; Numasawa, Y.

Author_Institution

NEC Corp., Kanagawa, Japan

fYear

1990

fDate

12-13 Jun 1990

Firstpage

173

Lastpage

179

Abstract

A new technology for low-temperature dielectric film formation under Al wirings is described. This technology utilizes spin-on film formed from the organic siloxane polymer solution optimized to have minimal film shrinkage/stress generation during heat treatment. The optimized solution is composed of 62-mol.% tetra-ethoxy-silane [Si(OEt) ₄], 31-mol.% methyl-tri-ethoxy-silane [Me-Si(OEt)₃], and 7-mol.% phosphorus-triethoxide [PO(OEt) ₃] oligomer in ethyl alcohol. Crack-free thick siloxane polymer film with no carbon is formed by three-step heat treatment processes (150°C hot plate baking, 400°C furnace annealing in N ₂, and 800°C furnace annealing in O₂). The planarization capability of this film is superior to that of the conventional BPSG reflow film, and other film properties are as good as those of the CVD-PSG film

Keywords

dielectric thin films; heat treatment; integrated circuit technology; metallisation; polymer films; semiconductor technology; Al wirings; film properties; furnace annealing; heat treatment; hot plate baking; interlayer formation technology; low-temperature dielectric film formation; methyl-tri-ethoxy-silane; minimal film shrinkage/stress generation; organic siloxane polymer solution; phosphorus-triethoxide; planarization capability; siloxane polymer film; spin-on film; tetra-ethoxy-silane; three-step heat treatment; Artificial intelligence; Dielectric films; Heat treatment; Organic compounds; Polymer films; Semiconductor films; Silicon; Stress; Temperature; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE

Conference_Location

Santa Clara, CA

Type

conf

DOI

10.1109/VMIC.1990.127862

Filename

127862