Title :
Design and technology of InGaP/GaAs DHBTs
Author :
Rezazadeh, A.A. ; Sotoodeh, M.
Author_Institution :
Dept. of Electron. Eng., King´´s Coll., London, UK
Abstract :
A comparison of the DC and RF performance of InGaP/GaAs based SHBT and DHBT is made. These devices have been fabricated using a planar self-aligned technology using ion implant isolation. It was demonstrated that DHBT is the most promising device for power amplifier applications. Finally a new collector design approach for minimising the base transit time in DHBTs is suggested.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; ion implantation; isolation technology; microwave bipolar transistors; semiconductor device measurement; semiconductor device models; DC performance; InGaP-GaAs; InGaP/GaAs DHBTs; RF performance; SHBT; base transit time; collector design; design; ion implant isolation; planar self-aligned technology; power amplifier applications; Double heterojunction bipolar transistors; Educational institutions; Electrons; Gallium arsenide; Heterojunction bipolar transistors; Implants; Isolation technology; Microwave devices; Photonic band gap; Voltage;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889463
