Title :
Defective state analysis in silicon carbide
Author :
Castaldini, A. ; Cavallini, A. ; Polenta, L. ; Nava, F. ; Canali, C. ; Lanzieri, C.
Author_Institution :
Dipt. di Fisica, INFM, Bologna, Italy
Abstract :
Native or process-induced defective states may significantly affect the transport properties of silicon carbide. It is then of fundamental importance to detect them and, possibly, to identify their origin. This paper deals with the defect analysis of silicon carbide using capacitance transient spectroscopy. Electrical characterization can evaluate transport mechanisms and diode quality. Deep levels found can be ascribed to impurities introduced during growth and metallization
Keywords :
crystal defects; deep level transient spectroscopy; deep levels; defect states; silicon compounds; wide band gap semiconductors; SiC; capacitance transient spectroscopy; deep levels; defective state analysis; diode quality; electrical characterization; growth; metallization; transport mechanisms; Capacitance; Capacitance-voltage characteristics; Conducting materials; Gold; Impurities; Metallization; Schottky diodes; Silicon carbide; Spectroscopy; Transient analysis;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location :
Smolenice
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889472
