• DocumentCode
    2698857
  • Title

    A novel TCAD-based methodology to minimize the impact of parasitic structures on ESD performance

  • Author

    Olson, Nicholas ; Boselli, Gianluca ; Salman, Akram ; Rosenbaum, Elyse

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
  • fYear
    2010
  • fDate
    2-6 May 2010
  • Firstpage
    474
  • Lastpage
    479
  • Abstract
    During an ESD event, breakdown of a parasitic bipolar transistor can lead to chip failure. For a variety of ESD protection networks, it is demonstrated that TCAD simulations correctly predict the stress level at which failure occurs due to bipolar breakdown. A procedure to characterize the interaction between any two N-type diffusions and the ESD cells to which they are connected is presented.
  • Keywords
    bipolar transistors; electrostatic discharge; technology CAD (electronics); ESD protection networks; N-type diffusions; TCAD simulation; bipolar breakdown; parasitic bipolar transistor structure; BiCMOS integrated circuits; Bipolar transistors; Clamps; Electric breakdown; Electrostatic discharge; Protection; Silicon; Stress; Testing; Voltage; ESD; Electrostatic Discharge; Parasitic Bipolar; TCAD;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2010 IEEE International
  • Conference_Location
    Anaheim, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4244-5430-3
  • Type

    conf

  • DOI
    10.1109/IRPS.2010.5488784
  • Filename
    5488784
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2698857