Title :
The influence of defect diffusion under electric field on optical and luminescent characteristics of cadmium sulphide
Author :
Borkovskaya, L.V. ; Dzhumaev, B.R. ; Khomenkova, L.Yu. ; Korsunskaya, N.E. ; Markevich, I.V.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Abstract :
Incorporation of Cu and Ag in CdS crystals and their extraction under electric field were observed. Changes in luminescence and absorption spectra due to these processes were investigated. Considerable diffusion anisotropy was found for both impurities, copper diffusion being enhanced perpendicular to the c-axis and silver diffusing faster parallel to the c-axis
Keywords :
II-VI semiconductors; cadmium compounds; copper; diffusion; impurity absorption spectra; photoluminescence; silver; CdS:Ag; CdS:Cu; absorption spectra; defect diffusion; diffusion anisotropy; electric field; luminescence; Anodes; Bleaching; Cadmium; Cathodes; Copper; Crystals; Electrodes; Resistance heating; Silver; Temperature;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location :
Smolenice
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889478
