Title :
Trench isolation technology
Author :
Pogge, H. Bernhard
Author_Institution :
IBM Gen. Technol. Div., Hopewell Junction, NY, USA
Abstract :
The process technologies associated with fabricating trench isolation are discussed along with current process and device concerns. Potential development directions required for further refinements and diversification to satisfy future device designs are also considered. The following process elements are examined: trench formation, trench linear formation, trench filling, and surface replanarization
Keywords :
bipolar integrated circuits; integrated circuit technology; oxidation; bipolar circuits; device designs; oxidation parameters; process technologies; surface replanarization; trench filling; trench formation; trench isolation technology; trench linear formation; Chemical elements; Chemical technology; Computational geometry; Dry etching; Integrated circuit technology; Isolation technology; Lithography; Manufacturing; Planarization; Potential well;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1990., Proceedings of the 1990
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1990.171117
