• DocumentCode
    2698954
  • Title

    Formation of self-aligned TiN/CoSi2 bilayer from Co/Ti/Si and its applications in salicide, diffusion barrier and contact fill

  • Author

    Wei, Chih-Shih ; Fraser, David B. ; Dass, M.Lawrence A. ; Brat, Teodoro

  • Author_Institution
    Intel Corp., Santa Clara, CA, USA
  • fYear
    1990
  • fDate
    12-13 Jun 1990
  • Firstpage
    233
  • Lastpage
    239
  • Abstract
    A self-aligned TiN/CoSi2 structure was formed from Co/Ti/Si; this scheme is compatible with salicide technology. Low contact/diffusion resistances and good device characteristics were obtained using this method. In addition, the TiN overlayer can be used for the diffusion barrier in between Al and CoSi2 and for dopant diffusion. The dopant diffusion barrier permits the use of in-situ n+/p+ doped selective Si plugs for contact filling. The TiN also improves the temperature stability of the underlying CoSi2 film
  • Keywords
    cobalt compounds; contact resistance; metallisation; nitridation; titanium compounds; TiN-CoSi2; contact fill; contact filling; contact resistance; device characteristics; diffusion barrier; diffusion resistances; dopant diffusion; salicide; temperature stability; Annealing; Contact resistance; Filling; Nitrogen; Plugs; Semiconductor films; Silicides; Stability; Temperature; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
  • Conference_Location
    Santa Clara, CA
  • Type

    conf

  • DOI
    10.1109/VMIC.1990.127871
  • Filename
    127871
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2698954