Title :
Formation of self-aligned TiN/CoSi2 bilayer from Co/Ti/Si and its applications in salicide, diffusion barrier and contact fill
Author :
Wei, Chih-Shih ; Fraser, David B. ; Dass, M.Lawrence A. ; Brat, Teodoro
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
A self-aligned TiN/CoSi2 structure was formed from Co/Ti/Si; this scheme is compatible with salicide technology. Low contact/diffusion resistances and good device characteristics were obtained using this method. In addition, the TiN overlayer can be used for the diffusion barrier in between Al and CoSi2 and for dopant diffusion. The dopant diffusion barrier permits the use of in-situ n+/p+ doped selective Si plugs for contact filling. The TiN also improves the temperature stability of the underlying CoSi2 film
Keywords :
cobalt compounds; contact resistance; metallisation; nitridation; titanium compounds; TiN-CoSi2; contact fill; contact filling; contact resistance; device characteristics; diffusion barrier; diffusion resistances; dopant diffusion; salicide; temperature stability; Annealing; Contact resistance; Filling; Nitrogen; Plugs; Semiconductor films; Silicides; Stability; Temperature; Tin;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1990.127871
