Title :
Novel TDDB mechanism for p-FET accelerated by hydrogen from HfSiON film
Author :
Hirano, Izumi ; Kato, Koichi ; Nakasaki, Yasushi ; Fukatsu, Shigeto ; Mitani, Yuichiro ; Goto, Masakazu ; Inumiya, Seiji ; Sekine, Katsuyuki ; Sato, Motoyuki
Author_Institution :
Corp. R&D Center, Toshiba Corp., Yokohama, Japan
Abstract :
Time Dependent Dielectric Breakdown (TDDB) in p-FETs with HfSiON/SiO2 gate stacks under negative bias stress has been studied. It is shown that the shape parameter of Weibull distribution of Tbd, β, is very small value independent of gate electrode materials. This small β seems to arise from the interface layer (I.L.) breakdown. Further experimental result reveals the existence of additional interface layer degradation mechanisms due to hydrogen in HfSiON. The reduction of hydrogen amount in high-k dielectrics leads to the longer-term reliability in metal-gate/high-k gate stacks.
Keywords :
Weibull distribution; electric breakdown; electrodes; field effect transistors; hafnium compounds; high-k dielectric thin films; hydrogen; interface states; silicon compounds; HfSiON-SiO2; TDDB mechanism; Weibull distribution; gate electrode materials; high-k dielectric gate stacks; interface layer breakdown; interface layer degradation mechanism; metal-gate dielectric gate stacks; negative bias stress; p-FET; time dependent dielectric breakdown; Acceleration; Dielectric breakdown; Dielectric materials; Electrodes; High K dielectric materials; High-K gate dielectrics; Hydrogen; Shape; Stress; Weibull distribution; HfSiON; High-k dielectrics; Hydrogen; Reliability; TDDB; p-FET;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488793
