Novel TDDB mechanism for p-FET accelerated by hydrogen from HfSiON film

Author

Hirano, Izumi ; Kato, Koichi ; Nakasaki, Yasushi ; Fukatsu, Shigeto ; Mitani, Yuichiro ; Goto, Masakazu ; Inumiya, Seiji ; Sekine, Katsuyuki ; Sato, Motoyuki

Author_Institution

Corp. R&D Center, Toshiba Corp., Yokohama, Japan

fYear

2010

fDate

2-6 May 2010

Firstpage

424

Lastpage

429

Abstract

Time Dependent Dielectric Breakdown (TDDB) in p-FETs with HfSiON/SiO₂ gate stacks under negative bias stress has been studied. It is shown that the shape parameter of Weibull distribution of T_bd, β, is very small value independent of gate electrode materials. This small β seems to arise from the interface layer (I.L.) breakdown. Further experimental result reveals the existence of additional interface layer degradation mechanisms due to hydrogen in HfSiON. The reduction of hydrogen amount in high-k dielectrics leads to the longer-term reliability in metal-gate/high-k gate stacks.

Keywords

Weibull distribution; electric breakdown; electrodes; field effect transistors; hafnium compounds; high-k dielectric thin films; hydrogen; interface states; silicon compounds; HfSiON-SiO₂; TDDB mechanism; Weibull distribution; gate electrode materials; high-k dielectric gate stacks; interface layer breakdown; interface layer degradation mechanism; metal-gate dielectric gate stacks; negative bias stress; p-FET; time dependent dielectric breakdown; Acceleration; Dielectric breakdown; Dielectric materials; Electrodes; High K dielectric materials; High-K gate dielectrics; Hydrogen; Shape; Stress; Weibull distribution; HfSiON; High-k dielectrics; Hydrogen; Reliability; TDDB; p-FET;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2010 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-5430-3

Type

conf

DOI

10.1109/IRPS.2010.5488793

Filename

5488793