Process optimization and diffusion length evaluation of a new aqueous base developable negative epoxy electron beam resist

Author

Glezos, N. ; Argitis, P. ; Velessiotis, D. ; Raptis, I. ; Hudek, P. ; Kostic, I.

Author_Institution

Inst. of Microelectron., IMEL, Ag. Paraskevi, Greece

fYear

2000

fDate

2000

Firstpage

231

Lastpage

234

Abstract

A new aqueous base developable, chemically amplified negative resist based on epoxy chemistry (ADEPR) is evaluated for high resolution, high-speed e-beam lithography. The acid diffusion coefficient of this system is also evaluated. This resist is formulated using partially hydrogenated poly(hydroxy styrene) and epoxy novolac polymers. The absence of swelling phenomena compared to pure epoxy systems allows lithography up to 100 nm regime and a sensitivity of 4-8 μC/cm² at 50 KeV. Both high-resolution line and dot exposures were used in order to evaluate the diffusion coefficient. The value of D=5.10^-14 cm²/sec fount is a little higher than its pure epoxy counterpart (EPR) but still lower than other commercial resists

Keywords

diffusion; electron resists; optimisation; polymers; reaction kinetics; 100 nm; acid diffusion coefficient; aqueous base developable negative epoxy electron beam resist; chemically amplified negative resist; diffusion coefficient; diffusion length; dot exposure; epoxy chemistry; epoxy novolac polymers; high resolution; high-resolution line exposure; high-speed e-beam lithography; partially hydrogenated poly(hydroxy styrene); process optimization; sensitivity; swelling phenomena; Chemical processes; Chemistry; Electron beams; Informatics; Lithography; Microelectronics; Paramagnetic resonance; Polymers; Resists; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

Conference_Location

Smolenice

Print_ISBN

0-7803-5939-9

Type

conf

DOI

10.1109/ASDAM.2000.889488

Filename

889488