Title :
Ge-film resistance and Si-based diode temperature microsensors
Author :
Boltovets, N.S. ; Kholevchuk, V.V. ; Konakova, R.V. ; Mitin, V.F. ; Venger, E.F.
Author_Institution :
State Res. Inst., Kiev, Ukraine
Abstract :
New types of miniature temperature sensors based on Ge films and silicon diodes have been developed and produced. The Ge film microthermometers are intended for use at temperatures from 1 to 400 K, and silicon microdiodes cover operating temperature range from 1 to 600 K. The designs of sensitive elements and the miniature package, as well as sensor characteristics, are presented
Keywords :
germanium; microsensors; resistance thermometers; semiconductor device measurement; semiconductor device packaging; semiconductor diodes; semiconductor thin films; silicon; temperature sensors; 1 to 600 K; Ge; Ge film microthermometers; Ge-film resistance temperature microsensors; Si; Si-based diode temperature microsensors; miniature package; miniature temperature sensors; sensitive elements; sensor characteristics; Cryogenics; Gold; Magnetic sensors; Microsensors; Packaging; Semiconductor diodes; Semiconductor films; Silicon; Temperature distribution; Temperature sensors;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location :
Smolenice
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889489
