DocumentCode
2699042
Title
Contribution of low-energy (≪ 10 MeV) neutrons to upset rate in a 65 nm SRAM
Author
Sierawski, Brian D. ; Warren, Kevin M. ; Reed, Robert A. ; Weller, Robert A. ; Mendenhall, Marcus M. ; Schrimpf, Ronald D. ; Baumann, Robert C. ; Zhu, Vivian
Author_Institution
Inst. for Space & Defense Electron., Vanderbilt Univ., Nashville, TN, USA
fYear
2010
fDate
2-6 May 2010
Firstpage
395
Lastpage
399
Abstract
Predictions of single and multiple cell upsets in a 65 nm bulk CMOS SRAM are presented for the low-energy (<; 10 MeV) portion of the NYC neutron spectrum. Scattering is identified as a significant nuclear mechanism for this regime and the consequence for multiple bit upset is discussed. The contribution is compared to the full spectrum.
Keywords
CMOS digital integrated circuits; SRAM chips; NYC neutron spectrum; bulk CMOS SRAM; low-energy neutrons; multiple bit upset; size 65 nm; Error correction codes; Field programmable gate arrays; Neutrons; Particle beams; Predictive models; Protons; Random access memory; Scattering; Single event upset; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4244-5430-3
Type
conf
DOI
10.1109/IRPS.2010.5488796
Filename
5488796
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