DocumentCode
2699064
Title
Influence of carrier screening and impurity correlation on the electron and optical properties of doping superlattices
Author
Ushakov, D.V. ; Kononenko, V.K. ; Manak, I.S.
Author_Institution
Belarussian State Univ., Minsk, Byelorussia
fYear
2000
fDate
2000
Firstpage
243
Lastpage
246
Abstract
The theoretical analysis of the electron and optical characteristics of doping superlattices is performed in the case of the Gaussian or exponential distributions in the density state tails and taking into account the electrostatic potential screening and band gap narrowing. The influence of the impurity correlations on the screening lengths and characteristic parameters of the density state tails is considered. It is shown that the impurity correlation leads to a fixed value of the diffusivity-mobility ratio, which at the Gaussian-like tails tends to the classical value kT/e
Keywords
Gaussian distribution; carrier mobility; energy gap; exponential distribution; impurity states; interface states; optical constants; semiconductor superlattices; Gaussian distributions; Gaussian-like tails; band gap narrowing; carrier screening; density state tails; diffusivity-mobility ratio; doping superlattices; electronic properties; electrostatic potential screening; exponential distributions; impurity correlation; impurity correlations; optical properties; screening lengths; Doping; Electron optics; Electrostatic analysis; Exponential distribution; Impurities; Optical superlattices; Performance analysis; Photonic band gap; Probability distribution; Tail;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location
Smolenice
Print_ISBN
0-7803-5939-9
Type
conf
DOI
10.1109/ASDAM.2000.889491
Filename
889491
Link To Document