DocumentCode
2699071
Title
Scaling trends of neutron effects in MLC NAND Flash memories
Author
Gerardin, S. ; Bagatin, M. ; Paccagnella, A. ; Cellere, G. ; Visconti, A. ; Beltrami, S. ; Andreani, C. ; Gorini, G. ; Frost, C.D.
Author_Institution
Dept. of Inf. Eng., Univ. of Padova, Padova, Italy
fYear
2010
fDate
2-6 May 2010
Firstpage
400
Lastpage
406
Abstract
We investigate atmospheric neutron effects on floating gate cells in MLC NAND Flash memories. Loss of information is shown to occur especially at the highest program levels, but to an extent that does not challenge current error correction capabilities. We discuss the physical mechanisms and analyze scaling trends, which show a rapid increase in sensitivity for decreasing feature size. A large spread in the cross section is visible from vendor to vendor for comparable feature size.
Keywords
flash memories; logic gates; MLC NAND flash memories; atmospheric neutron effects; error correction capabilities; floating gate cells; program levels; Bit error rate; CMOS technology; Error correction codes; Intersymbol interference; Ionizing radiation; Laboratories; Neutrons; Nonvolatile memory; Physics; Research and development; Atmospheric Neutrons; Error Correction Codes; Floating-gate Cells; Soft Errors;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4244-5430-3
Type
conf
DOI
10.1109/IRPS.2010.5488797
Filename
5488797
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