DocumentCode :
2699074
Title :
Study of the properties of n+-type ZnO:Al films obtained from ZnO/Al/ZnO nanometric structure
Author :
Vásquez-A, M.A. ; Andraca-Adame, J.A. ; Romero-Paredes, G. ; Peña-Sierra, R.
Author_Institution :
Dept. of Electr. Eng., CINVESTAV-IPN, Mexico City, Mexico
fYear :
2011
fDate :
26-28 Oct. 2011
Firstpage :
1
Lastpage :
4
Abstract :
The characterizations results of n+-type ZnO:Al films obtained by the fabrication process of ZnO/Al/ZnO nanometric structure are presented. ZnO films were deposited by DC reactive sputtering on corning glass substrates and the Aluminum (Al) metallic film was deposited by vacuum evaporation. The electrical resistivity, electron concentration and carrier mobility of n+-type ZnO:Al films are 2.85×10-3 Ω-cm, 7.14 × 1019 cm-3 and 9.86 cm2/V-s, respectively. The characterization by X-ray diffraction shows that n+-type ZnO:Al films are nanocrystalline with preferred orientation and grain size of ~9 nm. The films have 80 % of transmittance at the wavelength of 500 nm, with bandgap of 3.2 eV. In addition to these properties, the figure of merit of the films is 2240 Ω-1cm-1. The electrical, structural and optical properties of the films are useful for the manufacture of electroluminescent devices or transparent electrode layers.
Keywords :
II-VI semiconductors; X-ray diffraction; aluminium; electrical resistivity; electron mobility; energy gap; grain size; metallic thin films; nanocomposites; nanofabrication; semiconductor thin films; semiconductor-metal boundaries; sputter deposition; ultraviolet spectra; vacuum deposition; visible spectra; wide band gap semiconductors; zinc compounds; DC reactive sputtering; SiO2; X-ray diffraction; ZnO-Al-ZnO; aluminum metallic film; band gap; carrier mobility; corning glass substrates; electrical properties; electrical resistivity; electroluminescent devices; electron concentration; grain size; n+-type ZnO:Al films; nanocrystalline orientation; nanometric structure; optical properties; resistivity 0.00285 ohmcm; structural properties; transmittance; transparent electrode layers; ultraviolet-visible spectra; vacuum evaporation; Conductivity; Diffraction; Lattices; Optical films; X-ray diffraction; Zinc oxide; Electrical Properties; TCO´s; Thin Films; Transmittance; XRD; ZnO;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Engineering Computing Science and Automatic Control (CCE), 2011 8th International Conference on
Conference_Location :
Merida City
Print_ISBN :
978-1-4577-1011-7
Type :
conf
DOI :
10.1109/ICEEE.2011.6106641
Filename :
6106641
Link To Document :
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