DocumentCode :
2699086
Title :
Heterojunction bipolar transistor with diffusive and ballistic electron transport in the base
Author :
Horák, M.
Author_Institution :
Dept. of Microelectron., Brno Univ. of Technol., Czechoslovakia
fYear :
2000
fDate :
2000
Firstpage :
247
Lastpage :
250
Abstract :
The effect of ballistic transport in the base of the heterojunction bipolar transistor is treated by the modification of the boundary conditions of the standard diffusion equation. The transistor properties are characterised by the yij and hij parameters that are considered as functions of signal frequency and base length. The pure ballistic and pure diffusive electron transport is considered as a special case
Keywords :
heterojunction bipolar transistors; high field effects; semiconductor device models; ballistic electron transport; ballistic transport; base; base length; boundary conditions; diffusive electron transport; heterojunction bipolar transistor; signal frequency; standard diffusion equation; Ballistic transport; Boundary conditions; Charge carriers; Current density; Cutoff frequency; Doping; Electron emission; Equations; Heterojunction bipolar transistors; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location :
Smolenice
Print_ISBN :
0-7803-5939-9
Type :
conf
DOI :
10.1109/ASDAM.2000.889492
Filename :
889492
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2699086
بازگشت