Homogeneity of InGaAs/InP nanostructures

Author

Piester, D. ; Ivanov, A.A. ; Bakin, A.S. ; Klaffs, T. ; Ursu, M. ; Wehmann, H.-H. ; Schlachetzki, A. ; Kipp, S.

Author_Institution

Inst. fur Halbleitertech., Tech. Univ. Carolo-Wilhelmina, Braunschweig, Germany

fYear

2000

fDate

2000

Firstpage

251

Lastpage

254

Abstract

Atomic-force microscopy is applied to wet-chemically etched cleaved facets of InGaAs/InP nanoheterostructures. This technique allows the precise determination of process parameters relevant to advanced quantum devices realized by metal-organic vapor-phase epitaxy (MOVPE). We present data on thickness homogeneity and growth rates. We give evidence for the high quality of InGaAs/InP nanostructures grown by MOVPE

Keywords

III-V semiconductors; MOCVD; atomic force microscopy; gallium arsenide; indium compounds; nanostructured materials; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; vapour phase epitaxial growth; InGaAs-InP; MOVPE; atomic-force microscopy; growth rate; nanoheterostructures; thickness homogeneity; wet-chemically etched cleaved facets; Atomic force microscopy; Atomic layer deposition; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Measurement techniques; Nanostructures; Quantum cascade lasers; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

Conference_Location

Smolenice

Print_ISBN

0-7803-5939-9

Type

conf

DOI

10.1109/ASDAM.2000.889493

Filename

889493