Title :
Morphology and electrical behaviour of Pd2Si/p-Si junctions
Author :
Horváth, Zs J. ; Kumar, J. ; Dobos, L. ; Pécz, B. ; Tóth, A.L. ; Chand, S. ; Karányi, J.
Author_Institution :
Res. Inst. for Tech. Phys. & Mater. Sci., Hungarian Acad. of Sci., Budapest, Hungary
Abstract :
Dendrite like morphology was observed in Pd2Si/p-Si junctions. The obtained high ideality factors and the significant difference between the apparent barrier heights evaluated from the current-voltage and capacitance-voltage measurements are explained on the basis of this morphology
Keywords :
elemental semiconductors; interface structure; palladium alloys; scanning electron microscopy; semiconductor-metal boundaries; silicon; silicon alloys; transmission electron microscopy; Pd2Si-Si; Pd2Si/p-Si junctions; SEM; TEM; apparent barrier heights; capacitance-voltage measurements; current-voltage measurements; dendrite like morphology; ideality factors; Annealing; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Materials science and technology; Morphology; Physics; Scanning electron microscopy; Temperature distribution; Thermionic emission;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location :
Smolenice
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889496
