Title :
Correlation between diffusion length and Hall mobility in different GaAs epitaxial layers
Author :
Nemcsics, Ákos ; Somogyi, Károly
Author_Institution :
Res. Inst. for Tech. Phys. & Mater., Hungarian Acad. of Sci., Budapest, Hungary
Abstract :
The diffusion length of minority carriers in n-type GaAs epitaxial layers has been studied in this work. The value of diffusion length of minority carriers was determined from the analysis of the photoresponse of an electrolytic barrier applied to the sample surface. The diffusion length on LPE layers was found to be smaller than that on VPE layers. This behaviour is discussed here
Keywords :
Hall mobility; III-V semiconductors; carrier lifetime; gallium arsenide; minority carriers; photoconductivity; semiconductor epitaxial layers; GaAs; Hall mobility; LPE layers; VPE layers; electrolytic barrier; minority carrier diffusion length; n-type epitaxial layers; photocurrents; Capacitance; Charge carriers; Electrodes; Epitaxial layers; Gallium arsenide; Hall effect; Length measurement; Measurement techniques; Photoconductivity; Substrates;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location :
Smolenice
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889497
