Characterization of millisecond-anneal-induced defects in SiON and SiON/Si interface by gate current fluctuation measurement

Author

Sakoda, Tsunehisa ; Nishigaya, Keita ; Kubo, Tomohiro ; Hori, Mitsuaki ; Minakata, Hiroshi ; Kobayashi, Yuko ; Mori, Hiroko ; Ono, Katsuji ; Tanahashi, Katsuto ; Tamura, Naoyoshi ; Mori, Toshifumi ; Tosaka, Yoshiharu ; Matsuyama, Hideya ; Kaneta, Chioko ;

Author_Institution

Fujitsu Microelectron. Ltd., Kuwana, Japan

fYear

2010

fDate

2-6 May 2010

Firstpage

379

Lastpage

384

Abstract

In this paper, we have investigated bulk trap and interface trap density (D_it) caused by millisecond annealing (MSA) using gate current fluctuation (GCF) and charge pumping measurements. We show that the high energy flash lamp annealing (FLA) creates the GCF with a long duration time and it is critical issue to get a stable SRAM operation. FLA creates interface traps localized at the gate edge of MOSFET.

Keywords

MOSFET; SRAM chips; elemental semiconductors; incoherent light annealing; interface states; silicon; silicon compounds; FLA; MOSFET; MSA; SRAM operation; SiON; SiON-Si; bulk trap; charge pumping measurements; flash lamp annealing; gate current fluctuation measurement; interface trap density; millisecond-anneal-induced defects; Annealing; Charge measurement; Current measurement; Dielectric measurements; Fluctuations; MOSFET circuits; Niobium compounds; Random access memory; Temperature; Titanium compounds; Dit; SRAM reliability; Vmin; charge pumping; component; flash lamp annealing; gate current fluctuation; laser annealing; millisecond-anneal;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2010 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-5430-3

Type

conf

DOI

10.1109/IRPS.2010.5488801

Filename

5488801