DocumentCode :
2699168
Title :
Characterization of millisecond-anneal-induced defects in SiON and SiON/Si interface by gate current fluctuation measurement
Author :
Sakoda, Tsunehisa ; Nishigaya, Keita ; Kubo, Tomohiro ; Hori, Mitsuaki ; Minakata, Hiroshi ; Kobayashi, Yuko ; Mori, Hiroko ; Ono, Katsuji ; Tanahashi, Katsuto ; Tamura, Naoyoshi ; Mori, Toshifumi ; Tosaka, Yoshiharu ; Matsuyama, Hideya ; Kaneta, Chioko ;
Author_Institution :
Fujitsu Microelectron. Ltd., Kuwana, Japan
fYear :
2010
fDate :
2-6 May 2010
Firstpage :
379
Lastpage :
384
Abstract :
In this paper, we have investigated bulk trap and interface trap density (Dit) caused by millisecond annealing (MSA) using gate current fluctuation (GCF) and charge pumping measurements. We show that the high energy flash lamp annealing (FLA) creates the GCF with a long duration time and it is critical issue to get a stable SRAM operation. FLA creates interface traps localized at the gate edge of MOSFET.
Keywords :
MOSFET; SRAM chips; elemental semiconductors; incoherent light annealing; interface states; silicon; silicon compounds; FLA; MOSFET; MSA; SRAM operation; SiON; SiON-Si; bulk trap; charge pumping measurements; flash lamp annealing; gate current fluctuation measurement; interface trap density; millisecond-anneal-induced defects; Annealing; Charge measurement; Current measurement; Dielectric measurements; Fluctuations; MOSFET circuits; Niobium compounds; Random access memory; Temperature; Titanium compounds; Dit; SRAM reliability; Vmin; charge pumping; component; flash lamp annealing; gate current fluctuation; laser annealing; millisecond-anneal;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4244-5430-3
Type :
conf
DOI :
10.1109/IRPS.2010.5488801
Filename :
5488801
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2699168
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