The evolution of transverse modes in GaInNAs VCSELs

Author

Othman, Marini ; Tastavridis, K. ; Yong, JCL ; Rorison, J. ; Penty, Rv ; White, El

Author_Institution

Dept. of Electr. & Electron. Eng., Bristol Univ., UK

Volume

1

fYear

2002

fDate

2002

Firstpage

273

Abstract

In this work a circularly symmetric structure is assumed. The field, thermal, standard carrier diffusion and photon rate equations are solved accordingly. The model used for the material gain is both carrier and temperature dependent, with the nonlinear dependency introduced by the use of a phenomenological gain suppression factor. The model is flexible enough to be used for either gain-guided or index-guided structures, but at this initial stage of the work, gain-guided device whose operation is very much affected by thermal effects, composed of triple GaInNAs quantum wells with DBR stacks.

Keywords

Green´s function methods; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser modes; laser theory; quantum well lasers; semiconductor device models; surface emitting lasers; thermal lensing; DBR stacks; GaInAsN; GaInNAs MQW VCSELs; Green´s function method; carrier dependent; circularly symmetric structure; gain-guided structures; index-guided structures; nonlinear dependency; phenomenological gain suppression factor; photon rate equations; standard carrier diffusion; temperature dependent; thermal effects; transverse modes; triple GaInNAs quantum wells; Equations; Laser modes; Nonlinear optics; Optical arrays; Optical materials; Optical pumping; Optical refraction; Optical variables control; Thermal lensing; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7500-9

Type

conf

DOI

10.1109/LEOS.2002.1134033

Filename

1134033