• DocumentCode
    2699285
  • Title

    Stress and TEM measurements as a function of temperature for aluminum alloys

  • Author

    Gardner, Donald S. ; Longworth, H.P. ; Flinn, Paul A.

  • Author_Institution
    Center for Integrated Syst., Stanford Univ., CA, USA
  • fYear
    1990
  • fDate
    12-13 Jun 1990
  • Firstpage
    243
  • Lastpage
    253
  • Abstract
    Measurements of the stress in situ as a function of temperature have proven to be an easy and powerful technique for obtaining information on the temperature and time for formation of both solid-state reactions and changes in morphology and structure. Correlating these changes using hot-stage transmission electron microscopy (TEM) and X-ray diffraction measurements has demonstrated that the stress changes correspond to chemical reactions and structural changes. The solid-state reactions of films consisting of aluminum with tantalum and vanadium were examined using stress measurements, TEM, X-ray diffraction, resistivity, and surface roughness measurements. The growth of very large gains (50-100 μm) in Al/Cu/Cr films was also examined using both stress measurements and hot-stage TEM in situ during thermal cycling. Stress measurements revealed that aluminum reacts with vanadium first at 370°C and then at 410°C. Using X-ray diffraction and cross-sectional TEM analysis, the first reaction was found to correlate with the formation of VAl3 and the second reaction with the formation VAl11. The thickness of the vanadium aluminide layer changed significantly after the second reaction. Similar measurements of Al-Si/Ta revealed that an untextured jagged TaAl3 layer forms at 430°C
  • Keywords
    X-ray diffraction examination of materials; aluminium alloys; chemical interdiffusion; internal stresses; metallisation; stress measurement; surface topography measurement; tantalum; transmission electron microscope examination of materials; vanadium; 370 degC; 410 degC; Al-Cu-Cr; AlSi-Ta; AlSi-V; TEM measurements; X-ray diffraction measurements; hot-stage transmission electron microscopy; morphology; resistivity; solid-state reactions; stress changes; stress measurements; surface roughness measurements; thermal cycling; vanadium aluminide layer; Aluminum; Chemicals; Conductivity; Morphology; Solid state circuits; Stress measurement; Temperature; Time measurement; Transmission electron microscopy; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
  • Conference_Location
    Santa Clara, CA
  • Type

    conf

  • DOI
    10.1109/VMIC.1990.127873
  • Filename
    127873