Accumulation mode transistors for silicon-on-insulator circuits

Summary form only given. Devices and circuits fabricated on thin fully depleted (FD) silicon-on-insulator (SOI) substrates should provide very high levels of performance for submicron circuits. The fully depleted transistor offers several advantages such as no kink effect, a reduction in the impact ionization effects and short-channel effects normally found in thick-film and bulk devices. In addition fully depleted transistors offer high carrier mobilities and an increase in transconductance. To obtain even higher performance particularly with respect to the P-channel transistor, an accumulation mode (AM) device has been used. The Operation of this device depends on the formation of an accumulation layer under the gate, as opposed to an inversion layer. Two-dimensional modeling and experimental data indicate that the AM transistor is a favored device for use in ULSI SOI circuits