Title :
Reliability characterization of 32nm high-K and Metal-Gate logic transistor technology
Author :
Pae, Sangwoo ; Ashok, Ashwin ; Choi, Jingyoo ; Ghani, Tahir ; He, Jun ; Lee, Seok-Hee ; Lemay, Karen ; Liu, Mark ; Lu, Ryan ; Packan, Paul ; Parker, Chris ; Purser, Richard ; Amour, Anthony St ; Woolery, Bruce
Author_Institution :
Intel Corp., Ltd. Q&R, Hillsboro, OR, USA
Abstract :
High-K (HK) and Metal-Gate (MG) transistor reliability is very challenging both from the standpoint of introduction of new materials and requirement of higher field of operation for higher performance. In this paper, key and unique HK+MG intrinsic transistor reliability mechanisms observed on 32nm logic technology generation is presented. We´ll present intrinsic reliability similar to or better than 45nm generation.
Keywords :
field effect transistors; high-k dielectric thin films; semiconductor device breakdown; semiconductor device reliability; transistor-transistor logic; TDDB; field effect transistors; high-k transistor reliability; metal-gate logic transistor reliability; size 32 nm; time dependent dielectric breakdown; Capacitive sensors; Electric breakdown; Germanium silicon alloys; High K dielectric materials; High-K gate dielectrics; Logic; MOS devices; Materials reliability; Silicon germanium; Tunneling; Burn-in; TDDB and BTI; high-k dielectrics; metal-gate transistor; process charging;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488814
