Title :
On the measurement of high resistance semiconductors by the van der Pauw method
Author_Institution :
Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia
Abstract :
We measured transport parameters of semiinsulating (SI) and low temperature (LT) GaAs using the van der Pauw method. A detailed procedure for semiinsulating sample preparation and for obtaining reliable experimental data is given. The advantage of using a constant voltage source instead of a constant current source is demonstrated in the case of high resistivity semiconductor materials
Keywords :
III-V semiconductors; electrical resistivity; gallium arsenide; semiconductor thin films; GaAs; constant current source; constant voltage source; high resistance semiconductors; transport parameters; van der Pauw method; Current measurement; Density estimation robust algorithm; Electric resistance; Electric variables measurement; Electrical resistance measurement; Gallium arsenide; Magnetic field measurement; Semiconductor materials; Temperature dependence; Voltage;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location :
Smolenice
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889512
