Title :
Explosion phenomenon of high resistance via during TEM sample preparation using FIB
Author :
Liu, Pan ; Tee, Irene ; Seah, Soo Sien ; Soo, Chi Wen ; Chen, Ye ; Mo, Zhi Qiang
Author_Institution :
Failure Anal. Dept., GLOBALFOUNDRIES Singapore Pte Ltd., Singapore, Singapore
Abstract :
High-resistance via explosion is a new damage phenomenon which is induced during TEM sample preparation using FIB. Two methods that will prevent this phenomenon are introduced. In practice, these methods have been effective in avoiding high-resistance via explosion.
Keywords :
electric breakdown; electric resistance measurement; focused ion beam technology; semiconductor device reliability; transmission electron microscopy; FIB; TDDB; TEM sample preparation; damage phenomenon; focused ion beam technology; high resistance explosion; resistance measurement methodology; semiconductor manufacturing reliability test; time dependent dielectric breakdown; Amorphous materials; Copper; Electron beams; Explosions; Failure analysis; Ion beams; Milling machines; Production; Testing; Wood industry; EM; FIB; High resistance; TEM sample preparation; Via explosion;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488816
