Title :
The influence of the electrolyte-semiconductor interface on the doping profile measurement of a GaAs structure
Author :
Kinder, R. ; Paszkiewicz, B. ; Sciana, B. ; Huleny, L.
Author_Institution :
Dept. of Microelectron., Slovak Univ. of Technol., Bratislava, Slovakia
Abstract :
The electrical behavior of the 0.1 M Tiron electrolyte-GaAs interface has been investigated. Attention is centred upon the properties of the electrolyte-GaAs interface and its influence on the capacitance-voltage measurements. Electrical properties of the interface were measured by electrochemical C-V techniques and impedance spectroscopy
Keywords :
III-V semiconductors; capacitance; doping profiles; electric impedance; gallium arsenide; semiconductor-electrolyte boundaries; GaAs; Tiron electrolyte; capacitance-voltage measurements; doping profile; electrolyte-semiconductor interface; impedance spectroscopy; Capacitance; Capacitance-voltage characteristics; Doping profiles; Electric variables measurement; Electrical resistance measurement; Electronic mail; Frequency measurement; Gallium arsenide; Impedance measurement; Thyristors;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location :
Smolenice
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889514
