• DocumentCode
    2699475
  • Title

    A new method for improving performances of a polycrystalline solar cell

  • Author

    Kolsi, Sami ; Ben Amar, Mohamed

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Sfax, Sfax, Tunisia
  • fYear
    2015
  • fDate
    24-26 March 2015
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    In this paper, we present a two-dimensional polycrystalline solar cell model to determine the parameters of the cell, such as the photocurrent, the dark current and the conversion efficiency. In this model, we consider an exponential doping profile of the p-region of the cell and hence the onset of an electric field in this region in order to reduce the minority carrier recombination at grain boundary and at rear contact. Consequently, this improved conversion efficiency of the cell. In order to optimize conversion efficiency, the presented model is implemented through a simulation program while varying thickness and doping concentration in the p-region of the cell. Compared with the case of Dirac´s function doping profile, the conversion efficiency is maximal in the case of an exponential doping profile.
  • Keywords
    doping profiles; electric fields; grain boundaries; solar cells; electric field; exponential doping profile; grain boundary; minority carrier recombination reduction; two-dimensional polycrystalline solar cell performance improvement; Dark current; Doping profiles; Mathematical model; Photovoltaic cells; Semiconductor process modeling; Space charge; conversion efficiency; doping profile; optimization; polycystalline solar cell;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Renewable Energy Congress (IREC), 2015 6th International
  • Conference_Location
    Sousse
  • Type

    conf

  • DOI
    10.1109/IREC.2015.7110856
  • Filename
    7110856