Title :
Peculiarities of Raman spectra from porous silicon
Author :
Korsunskaya, N.E. ; Sheinkman, M.K. ; Valakh, M.Ya. ; Torchinskaya, T.V. ; Khomenkova, L.Yu. ; Yukhimchuk, V.A. ; Bulakh, B.M. ; Dzhumaev, M.K. ; Many, A. ; Goldstein, Y. ; Savir, E.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Abstract :
The enhancement of the Raman intensity from a porous layer compared to the signal from the silicon substrate was observed. It is assumed that this phenomenon is due to the specific form of pores that leads to the optical effect of focusing of scattered light near the bottom of the macropores. It was shown that the peak position and shape of the Raman line depend on the nanostructure of the pore bottom
Keywords :
Raman spectra; atomic force microscopy; elemental semiconductors; nanostructured materials; porous semiconductors; scanning electron microscopy; silicon; AFM; Raman spectra; SEM; Si; nanostructure; porous silicon; silicon substrate; Atomic force microscopy; Nanocrystals; Optical scattering; Physics; Raman scattering; Scanning electron microscopy; Shape; Silicon; Substrates; Water storage;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location :
Smolenice
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889515
