Title :
Effect of the plasmon-phonon coupling anisotropy on the reflection coefficient of polar semiconductors ZnO and SiC-6H
Author :
Venger, E.F. ; Davidenko, S.M. ; Melnichuk, L. Yu ; Melnichuk, L.Yu. ; Pasechnik, Yu.A.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Abstract :
We present some results of our investigations of the reflection coefficient in the IR spectral region for ZnO and SiC-6H crystals. We account for vibrations of three subsystems that are coupled in pairs, namely: (i) electromagnetic waves, (ii) optical lattice vibrations, and (iii) plasma oscillations of free charge carriers. It is shown that anisotropy of phonons and plasmons leads to a number of peculiarities in both the spectrum of coupled oscillations and transparency regions
Keywords :
II-VI semiconductors; infrared spectra; phonon-plasmon interactions; polar semiconductors; reflectivity; silicon compounds; wide band gap semiconductors; zinc compounds; IR spectral region; SiC; SiC-6H; ZnO; coupled oscillations; coupled subsystems; electromagnetic waves; free charge carriers; optical lattice vibrations; plasma oscillations; plasmon-phonon coupling anisotropy; polar semiconductors; reflection coefficient; subsystem vibrations; transparency regions; Anisotropic magnetoresistance; Crystals; Electromagnetic coupling; Electromagnetic reflection; Electromagnetic scattering; Lattices; Optical coupling; Optical reflection; Plasma waves; Zinc oxide;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location :
Smolenice
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889516