DocumentCode
2699580
Title
Accelerated testing of RF-MEMS contact degradation through radiation sources
Author
Tazzoli, A. ; Barbato, M. ; Giliberto, V. ; Monaco, G. ; Gerardin, S. ; Nicolosi, P. ; Paccagnella, A. ; Meneghesso, G.
Author_Institution
Dept. of Inf. Eng., Univ. of Padova, Padova, Italy
fYear
2010
fDate
2-6 May 2010
Firstpage
246
Lastpage
251
Abstract
This work aims to propose a novel method to accelerate the lifetime of ohmic RF-MEMS switches by means of radiation exposure. Experimental results of proton and γ-ray irradiation were compared to cycling stresses, obtaining similar degradation in electrical performances. Electrical measurements, RF simulations, and AFM analysis of surface roughness were carried out to verify the proposed method.
Keywords
atomic force microscopy; life testing; microswitches; surface roughness; AFM analysis; RF-MEMS contact degradation; accelerated testing; radiation exposure; radiation sources; surface roughness; Acceleration; Contacts; Degradation; Electric variables measurement; Life estimation; Protons; Radio frequency; Radiofrequency microelectromechanical systems; Stress; Switches; RF-MEMS; accelerated testing; radiation;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4244-5430-3
Type
conf
DOI
10.1109/IRPS.2010.5488823
Filename
5488823
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