Influence of substrate preparation on fracture properties of InP cantilevers

Author

Behrens, I. ; Peiner, E. ; Bakin, A.S. ; Schlachetzki, A.

Author_Institution

Inst. fur Halbleitertech., Tech. Univ. Braunschweig, Germany

fYear

2000

fDate

2000

Firstpage

387

Lastpage

390

Abstract

In this study we investigate the influence of the substrate preparation on the mechanical properties of indium phosphide layers used for hetero-micromachining. These layers were grown on silicon by metalorganic vapour-phase epitaxy. Exploiting the etching selectivity of indium phosphide versus silicon we realized freestanding cantilevers oriented in ⟨100⟩ and ⟨110⟩ crystal directions. Fracture-stress measurements revealed that cantilevers fabricated from a layer grown on structured substrates show a lower value compared to those grown on unstructured silicon

Keywords

III-V semiconductors; MOCVD; etching; fracture; indium compounds; micromachining; micromechanical resonators; semiconductor epitaxial layers; vapour phase epitaxial growth; InP; InP cantilevers; Si; Si substrate; etching selectivity; fracture properties; fracture-stress measurements; freestanding cantilevers; hetero-micromachining; metalorganic vapour-phase epitaxy; structured substrates; substrate preparation; Epitaxial growth; Epitaxial layers; Etching; Hidden Markov models; Indium phosphide; Mechanical sensors; Micromachining; Silicon; Substrates; Surface cracks;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

Conference_Location

Smolenice

Print_ISBN

0-7803-5939-9

Type

conf

DOI

10.1109/ASDAM.2000.889527

Filename

889527