DocumentCode
2699684
Title
Low-side driver´s failure mechanism in a class-D amplifier under short circuit test and a robust driver device
Author
Lee, Jian-Hsing ; Shih, J.R. ; Ong, Tong-Chern ; Wu, Kenneth
Author_Institution
Technol. Quality & Reliability Div., Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan
fYear
2010
fDate
2-6 May 2010
Firstpage
182
Lastpage
187
Abstract
The failure mechanism in a class-D audio amplifier under short-circuit test is analyzed. The damage, always in the low-side driver, is due to high current induced thermal run-away, which occurs during the shutdown after the over-current is detected. However, this high current doesn´t come from the over-current itself since the current is limited to below that the transistor in the class-D amplifier can sustain. Instead, the damage is caused by the displacement current when there is a large voltage change at the output of the class-D amplifier. Although the shutdown circuit is designed to prevent the high current flowing through the transistors of the class-D amplifier, it cannot prevent the current coming from the class-D amplifier itself. To eliminate the damage, the output transistors should be designed robust enough to against the low-pass filter induced large voltage swing.
Keywords
audio-frequency amplifiers; circuit testing; failure analysis; low-pass filters; network synthesis; transistors; class-D audio amplifier; current-induced thermal run-away; displacement current; low-pass filter; low-side driver failure mechanism; robust driver device; short circuit test; shutdown circuit; transistor; voltage swing; Circuit testing; Driver circuits; Failure analysis; Inductors; Low pass filters; MOS devices; Pulse amplifiers; Pulse width modulation; Robustness; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4244-5430-3
Type
conf
DOI
10.1109/IRPS.2010.5488830
Filename
5488830
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