Delta-doped layer influence on Schottky diodes parameters

Author

Osvald, J.

Author_Institution

Inst. of Electr. Eng., Czechoslovak Acad. of Sci., Bratislava, Slovakia

fYear

2000

fDate

2000

Firstpage

391

Lastpage

394

Abstract

We studied the influence of planar δ-doping on the parameters of Schottky diodes. It is shown that a δ-layer with the same type of conductivity as a base semiconductor material has no significant influence on the diode parameters. Changing the potential barrier shape after insertion of the δ-doped layer influences the diode current only slightly. Significant changes were found for Schottky diodes with δ-doped layers of opposite type conductivity compared with the base semiconductor. The resulting barriers are higher and depend on both the δ-doped layer position and the doping concentration

Keywords

III-V semiconductors; Schottky diodes; gallium arsenide; semiconductor device measurement; semiconductor device models; semiconductor doping; δ-doped layer; δ-doped layer position; GaAs; GaAs Schottky diode parameters; diode current; doping concentration; ideality factor; numerical method; planar δ-doping; potential barrier shape; Charge carrier processes; Conductivity; Electron mobility; Gallium arsenide; Ohmic contacts; Poisson equations; Schottky diodes; Semiconductor device doping; Semiconductor diodes; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

Conference_Location

Smolenice

Print_ISBN

0-7803-5939-9

Type

conf

DOI

10.1109/ASDAM.2000.889528

Filename

889528