DocumentCode :
2699717
Title :
Investigation of monotonous increase in saturation-region drain current during hot carrier stress in N-type Lateral Diffused MOSFET with STI
Author :
Huang, Yu-Hui ; Shih, J.R. ; Lee, Y.-H. ; Hsieh, Sunnys ; Liu, C.C. ; Wu, Kenneth ; Chou, H.L.
Author_Institution :
Mainstream Technol. Quality & Reliability Dept., Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan
fYear :
2010
fDate :
2-6 May 2010
Firstpage :
170
Lastpage :
174
Abstract :
Monotonous increase of saturation drain current Idsat but linear-region drain current Idlin reduction during hot carrier injection (HCI) stress is observed in N-type Lateral Diffused MOSFET. But the phenomenon of Idsat increase is contrary to what we typically observed during HCI stress. The increase of Idsat has been attributed to the increase of saturation substrate current Ibsat after HCI stress. TCAD simulations showed that the lateral electric field increases under the high gate bias when a significant amount of electron trapping occurs along the STI corner in the drift region. The trapped electrons will change the distribution of localized electric potential and will result in the substrate current Ib increase. It is also observed that the 1st Ib peak at lower Vgs degrades, consistent with the reduction of drain and source current, due to HCI induced electron trapping. In another word, the electron trapping has two competing effects - one is with current degradation at lower Vgs and the other is with the electric field enhancement that causes the Idsat to increase at higher Vgs.
Keywords :
MOSFET; electric fields; hot carriers; HCI induced electron trapping; HCI stress; STI; TCAD simulations; hot carrier injection; lateral electric field; linear-region drain current; localized electric potential distribution; n-type lateral diffused MOSFET; saturation substrate current; saturation-region drain current; substrate current; Degradation; Electron traps; Hot carriers; Human computer interaction; MOSFET circuits; Semiconductor device reliability; Stress; Substrates; Transconductance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4244-5430-3
Type :
conf
DOI :
10.1109/IRPS.2010.5488832
Filename :
5488832
Link To Document :
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