Title :
Modeling the lifetime of a lateral DMOS transistor in repetitive clamping mode
Author :
Riedlberger, E. ; Keller, R. ; Reisinger, H. ; Gustin, W. ; Spitzer, A. ; Stecher, M. ; Jungemann, C.
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
Hot carrier degradation is critical for LDMOS transistors especially in applications where inductive loads are repetitively switched. In this work, a model for predicting the hot carrier degradation of an LDMOS in dynamic operation conditions is developed and verified for a device driving an inductive load in repetitive clamping mode. Device simulations are performed using the hydrodynamic model. Based on these simulations the physical mechanism of hot carrier degradation is investigated. The results are verified experimentally by photon-emission microscopy. Monte-Carlo simulation delivers profound insight into the spatial and energy distribution of the carriers impinging on the Si/SiO2-interface.
Keywords :
MOSFET; Monte Carlo methods; elemental semiconductors; hot carriers; photoluminescence; semiconductor device models; semiconductor device reliability; silicon; silicon compounds; LDMOS transistors; Monte-Carlo simulation; Si-SiO2; carrier impinging; device simulations; energy distribution; hot carrier degradation prediction model; hydrodynamic model; lateral DMOS transistor lifetime modelling; photon-emission microscopy; repetitive clamping mode; Acceleration; Clamps; Degradation; Hot carriers; Microelectronics; Predictive models; Qualifications; Stress; Temperature; Vehicle dynamics; LDMOS; clamping; hot carrier degradation; hot carrier stress; inductance; inductive load; model; switching;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488833
