DocumentCode :
2699742
Title :
Preparation, deposition and characterization of TiOx layers for organic PLEDs, solar cells and PTFTs
Author :
Sanchez, J.G. ; Flores, V.M. ; Resendiz, L. ; Estrada, M.
Author_Institution :
Dept. of Electr. Eng., CINVESTAV-IPN, Mexico City, Mexico
fYear :
2011
fDate :
26-28 Oct. 2011
Firstpage :
1
Lastpage :
4
Abstract :
Wide band gap materials like LiF are being used as electron/injection layers (EIL/ETL) in PLEDs, to improve their efficiency. Recently, another wide gap material, TiOx, is being studied as an alternative for these EIL/ETL layers. TiOx layers are also studied as optical spacer for PSCs. In this work, TiOx layers of different thickness were deposited by spin coating from a solution of titanium oxide gel using titanium isopropoxide as precursor. The preparation was adjusted to the local conditions of the laboratory and requirements to control film thickness. Films were characterized optically and electrically, being observed that in dependence on the preparation conditions and further dilution in ethanol, films of thickness in the range between 60 nm to more than 200 nm can be prepared. Thinner films show high current density, which in combination with the high energy gap and index of refraction of the material, can be used as electron injection/transport layer and as optical spacers. MIS capacitors using thicker films, greater than 200 nm, showed a dielectric constant greater than 12 and a critical electric field greater than 105 V/cm, which indicates than the spin coated TiOx films prepared using the described sol-gel procedure can be used also as the dielectric material in MIS structures for PTFTs.
Keywords :
MIS capacitors; electron mobility; optical films; organic light emitting diodes; permittivity; refractive index; semiconductor growth; semiconductor thin films; sol-gel processing; solar cells; spin coating; titanium compounds; wide band gap semiconductors; MIS capacitors; MIS structures; PLEDs; PTFTs; TiOx; critical electric field; current density; dielectric constant; dielectric material; electron injection-transport layer; energy gap; ethanol; film thickness; optical spacer; refraction index; size 60 nm to 200 nm; sol-gel procedure; solar cells; spin coating; titanium isopropoxide; titanium oxide gel; wide band gap materials; Ethanol; Optical films; Optical refraction; Silicon; Titanium; TiOx layer deposition; TiOx layers characterization; TiOx sol-gel preparation; organic devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Engineering Computing Science and Automatic Control (CCE), 2011 8th International Conference on
Conference_Location :
Merida City
Print_ISBN :
978-1-4577-1011-7
Type :
conf
DOI :
10.1109/ICEEE.2011.6106675
Filename :
6106675
Link To Document :
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