Title :
Long wavelength (1.02-1.03 μm) InGaAs/GaAs lasers fabricated by MBE
Author :
Piwonski, T. ; Sajewicz, P. ; Kubica, J.M. ; Reginski, K. ; Mroziewicz, B. ; Bugajski, M.
Author_Institution :
Inst. of Electron. Technol., Warsaw, Poland
Abstract :
The operation of InGaAs/GaAs SCH SQW lasers emitting at the wavelength 1.02-1.03 μm, fabricated by MBE technology, is reported. Longer wavelength of emission was achieved by applying high indium content in the active region. The paper presents characteristics of fabricated structures measured at room temperature (T=300 K) under pulsed operation. The results are promising and give hope for fabricating structures emitting at 1.06 μm, which in some applications could replace diode pumped Nd:YAG lasers
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor quantum wells; 1.02 to 1.03 mum; 1.02-1.03 μm; 300 K; InGaAs-GaAs; InGaAs/GaAs SCH SQW lasers; MBE fabrication; active region; high indium content; long wavelength lasers; pulsed operation; Capacitive sensors; Gallium arsenide; Indium gallium arsenide; Lattices; Optical design; Quantum well lasers; Semiconductor lasers; Substrates; Surface emitting lasers; Temperature;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location :
Smolenice
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889534
