• DocumentCode
    2699812
  • Title

    Instability of homogeneous composition of highly strained QWs in heterostructures GaAs/InxGa1-xAs/GaAs

  • Author

    Klimovskaya, A.I. ; Grigor´ev, A.N. ; Gule, E.G. ; Dryha, Ju A. ; Litovchenko, V.G.

  • Author_Institution
    Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    433
  • Lastpage
    435
  • Abstract
    InxGa1-xAs QW-layers embedded in GaAs matrix have been characterized by photoluminescence (PL) study. We have established the relation between the PL parameters and mismatch of the lattice parameters of the layer and matrix. In highly strained layers several PL bands were observed instead of one band. This was shown to be a result of alternating content of In arised only in highly strained layers
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum wells; GaAs-InGaAs-GaAs; GaAs/InxGa1-xAs/GaAs heterostructure; homogeneous composition instability; lattice parameter mismatch; photoluminescence; strained quantum well; Artificial intelligence; Capacitive sensors; Character generation; Gallium arsenide; Lattices; Photoluminescence; Physics; Production; Solids; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
  • Conference_Location
    Smolenice
  • Print_ISBN
    0-7803-5939-9
  • Type

    conf

  • DOI
    10.1109/ASDAM.2000.889538
  • Filename
    889538
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2699812