Title :
Lasing operation of ZnTe based yellow-green laser diodes
Author :
Kikuchi, Akihiko ; Manoshiro, Asuka ; Nomura, Ichirou ; Kishino, Katsumi
Author_Institution :
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo
Abstract :
Current injection lasing operation of ZnTe based yellow-green light semiconductor laser diodes (LDs) with ZnCdTe active layer and MgZnSeTe cladding layers have been achieved, for the first time. The lasing characteristics were evaluated with a single pulse current injection mode at low temperature. The lowest threshold current density of the LD was 2.7 kA/cm2 at 100 K. The maximum lasing temperature was 175 K and the observed lasing wavelength ranged from 564 to 576 nm
Keywords :
II-VI semiconductors; cadmium compounds; claddings; magnesium compounds; selenium compounds; semiconductor lasers; zinc compounds; 100 K; 564 to 576 nm; MgZnSeTe; ZnCdTe; active layer; cladding layers; current injection; lasing operation; semiconductor laser diodes; yellow-green laser diodes; Diode lasers; Educational technology; Electrodes; Optical buffering; Optical superlattices; Quantum well devices; Substrates; Temperature dependence; Threshold current; Zinc compounds;
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-9040-7
DOI :
10.1109/DRC.2005.1553040
