Title :
Transversal photovoltage in heterostructure and Schottky contact
Author :
Shekhovtsov, L.V.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Abstract :
We have investigated the transverse photovoltage generated in semiconductor heterostructures by a modulated illumination. A complicated form of the photovoltage spectral curves for the Ge-GaAs heterostructure and NbN-GaAs Schottky contact is determined by the interaction between photocurrents flowing in the bulk and near interfaces. An additional unmodulated illumination of the samples changes the interaction between the photocurrents. This leads to modification of the photovoltage spectral curves. An analysis of their features enables one to obtain the characteristics of the interface uniformity in composite semiconductor structures
Keywords :
III-V semiconductors; Schottky barriers; elemental semiconductors; gallium arsenide; germanium; niobium compounds; photovoltaic effects; semiconductor heterojunctions; Ge-GaAs; NbN-GaAs; Schottky contact; semiconductor heterostructure; transversal photovoltage; Absorption; Conductivity; Gallium arsenide; Lighting; Optical modulation; Schottky barriers; Semiconductor films; Substrates; Voltage; Wavelength measurement;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location :
Smolenice
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889539
