Title :
Effect of rapid thermal annealing on the properties of ZrBx (TiBx)-Si contacts
Author :
Boltovets, N.S. ; Ivanov, V.N. ; Konakova, R.V. ; Milenin, V.V. ; Voitsikhovsky, D.I.
Author_Institution :
State Sci. & Res. Inst. Orion, Kiev, Ukraine
Abstract :
We investigated heat tolerance of ZrBx-n-n+-Si and TiBx-n-n+-Si barrier contacts exposed to rapid (60 s) thermal annealing (RTA) in hydrogen atmosphere at T=400, 600, 800 and 950°C. Using XPS, AES and static I-V curve measurements, we have shown that ZrBx-n-n+-Si(TiBx-n-n+ -Si) contacts retain their layer structure and barrier properties after RTA at 950(600)°C
Keywords :
Auger electron spectra; Schottky barriers; X-ray photoelectron spectra; elemental semiconductors; rapid thermal annealing; silicon; titanium compounds; zirconium compounds; 400 C; 600 C; 800 C; 950 C; AES; Schottky barrier; TiB-Si; TiBx-Si contact; XPS; ZrB-Si; ZrBx-Si contact; heat tolerance; rapid thermal annealing; static I-V characteristics; Atmosphere; Chemical analysis; Conducting materials; Hydrogen; Rapid thermal annealing; Schottky barriers; Semiconductor films; Semiconductor materials; Substrates; Zirconium;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location :
Smolenice
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889540
