Reliability status of GaN transistors and MMICs in Europe

Author

Dammann, M. ; Cäsar, M. ; Konstanzer, H. ; Waltereit, P. ; Quay, R. ; Bronner, W. ; Kiefer, R. ; Müller, S. ; Mikulla, M. ; van der Wel, P.J. ; Rödle, T. ; Bourgeois, F. ; Riepe, K.

Author_Institution

Fraunhofer Inst. for Appl. Solid State Phys. (IAF), Freiburg, Germany

fYear

2010

fDate

2-6 May 2010

Firstpage

129

Lastpage

133

Abstract

Recent DC- and RF-reliability results of European GaN HEMTs for high frequency power and MMIC applications between 2 and 18 GHz will be presented. The DC-stress test experiments have been performed at high current and high voltage settings in order to test the devices in the different regimes during large signal operation. GaN HEMTs and one stage MMICs have also been tested under RF-operation conditions and the correlation to DC-stress tests has been investigated.

Keywords

III-V semiconductors; MMIC; UHF field effect transistors; UHF integrated circuits; gallium compounds; high electron mobility transistors; microwave field effect transistors; power integrated circuits; semiconductor device reliability; DC-stress test reliability correlation; Europe; GaN; GaN HEMT; GaN transistor reliability; MMIC reliability; RF reliability; frequency 2 GHz to 18 GHz; high frequency power integrated circuit; Europe; Gallium nitride; HEMTs; Integrated circuit reliability; Life testing; MMICs; MODFETs; Radio frequency; Temperature; Voltage; DC-stress test; GaN HEMT; GaN MMIC; RF-stress test; reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2010 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-5430-3

Type

conf

DOI

10.1109/IRPS.2010.5488841

Filename

5488841