Title :
Reliability status of GaN transistors and MMICs in Europe
Author :
Dammann, M. ; Cäsar, M. ; Konstanzer, H. ; Waltereit, P. ; Quay, R. ; Bronner, W. ; Kiefer, R. ; Müller, S. ; Mikulla, M. ; van der Wel, P.J. ; Rödle, T. ; Bourgeois, F. ; Riepe, K.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys. (IAF), Freiburg, Germany
Abstract :
Recent DC- and RF-reliability results of European GaN HEMTs for high frequency power and MMIC applications between 2 and 18 GHz will be presented. The DC-stress test experiments have been performed at high current and high voltage settings in order to test the devices in the different regimes during large signal operation. GaN HEMTs and one stage MMICs have also been tested under RF-operation conditions and the correlation to DC-stress tests has been investigated.
Keywords :
III-V semiconductors; MMIC; UHF field effect transistors; UHF integrated circuits; gallium compounds; high electron mobility transistors; microwave field effect transistors; power integrated circuits; semiconductor device reliability; DC-stress test reliability correlation; Europe; GaN; GaN HEMT; GaN transistor reliability; MMIC reliability; RF reliability; frequency 2 GHz to 18 GHz; high frequency power integrated circuit; Europe; Gallium nitride; HEMTs; Integrated circuit reliability; Life testing; MMICs; MODFETs; Radio frequency; Temperature; Voltage; DC-stress test; GaN HEMT; GaN MMIC; RF-stress test; reliability;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488841
